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Optoelectronic Properties of Thin Amorphous and Micro-Crystalline p-Type Films Developed for Amorphous Silicon-Based Solar Cells

Published online by Cambridge University Press:  10 February 2011

K. Winz
Affiliation:
Forschungszentrum Jilich GmbH, ISI-PV, 52425 Julich, Germany, k.winz@kfa-juelich.de
B. Rech
Affiliation:
Forschungszentrum Jilich GmbH, ISI-PV, 52425 Julich, Germany, k.winz@kfa-juelich.de
T. H. Eickhoff
Affiliation:
Forschungszentrum Jilich GmbH, ISI-PV, 52425 Julich, Germany, k.winz@kfa-juelich.de
C. Beneking
Affiliation:
Forschungszentrum Jilich GmbH, ISI-PV, 52425 Julich, Germany, k.winz@kfa-juelich.de
C. M. Fortmann
Affiliation:
Department of Applied Mathematics and Statistics, State University of New York at Stony Brook, Stony Brook, NY, 11794-3600 USA
P. Hapke
Affiliation:
Forschungszentrum Jilich GmbH, ISI-PV, 52425 Julich, Germany, k.winz@kfa-juelich.de
H. Wagner
Affiliation:
Forschungszentrum Jilich GmbH, ISI-PV, 52425 Julich, Germany, k.winz@kfa-juelich.de
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Abstract

VIIF-PECVD at 110 MI-z was used to deposit micro-crystalline p-layers on glass substrates for detailed analysis and onto ZnO coated substrates for incorporation into p-i-n solar cell structures. Solar cell and film analysis confirmed that the films incorporated into the solar cells contained significant crystalline silicon volume fractions despite being only 30 nm thick. The p-i-n solar cells employing a micro-crystalline silicon p-layer deposited on ZnO coated substrates had series resistances, fill factors and Voc similar to those of the reference solar cells deposited onto SnO2 coated substrates and having optimized amorphous silicon-carbon p-layers. The short circuit current of the micro-crystalline p-layer case was 10 percent lower than that of the reference cell indicating that further optimization is required.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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