Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-20T07:09:02.274Z Has data issue: false hasContentIssue false
  • English
  • Français

Optimizing Process Parameters for the Growth of YBa2Cu3O7−δ thin-films

Published online by Cambridge University Press:  16 February 2011

M. Grant Norton ,
C. Barry Carter ,
Brian H. Moeckly ,
Stephen E. Russek  and
Robert A. Buhrman
M. Grant Norton
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853.
C. Barry Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853.
Brian H. Moeckly
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853.
Stephen E. Russek
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853.
Robert A. Buhrman
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853.
Get access

Abstract

Laser deposition is widely used to fabricate thin-films of the YBa2Cu3O7−δ superconductor due to its ease of operation and its reproducibility. The films thus formed do not require post-deposition annealing to be superconducting. The processing route involves many variables which would be expected to exert an influence on the early stages of the film growth and thereby the final microstructure. The parameters which have been varied are the laser energy, laser pulse repetition rate and laser wavelength. The films have been examined using transmission electron microscopy (TEM) in order to determine the film orientation, composition and microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 191: Symposium N – Laser Ablation for Materials Synthesis , 1990 , 141
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Russek, S.E., Moeckly, B.H., Buhrman, R.A., McWhirter, J.T., Sievers, A.J., Norton, M.G., Tietz, L.A. and Carter, C.B., Mat. Res. Soc. Symp. Proc. 169, (1989) (in press).Google Scholar
2. Koren, G., Gupta, A., Baseman, R.J., Lutwyche, M.I. and Laibowitz, R.B., Appl Phys. Lett. 55, 2450, (1989).Google Scholar
3. Norton, M.G., Summerfelt, S.R. and Carter, C.B., Appl. Phys. Lett. (1990) (in press).Google Scholar
4. Norton, M.G., Tietz, L.A., Summerfelt, S.R. and Carter, C.B., Appl. Phys. Lett. 55, 2348 (1989).Google Scholar
5. Norton, M.G., Tietz, L.A., Summerfelt, S.R. and Carter, C.B., Mat. Res. Soc. Symp. Proc. 169, (1989) (in press).Google Scholar
6. Norton, M.G., McKernan, S. and Carter, C.B., Philos. Mag. Lett. (1990) (submitted for publication).Google Scholar
7. Norton, M.G. and Carter, C.B. (unpublished).Google Scholar
8. Cheung, J.T. and Sankur, H., CRC Critical Reviews in Solid State and Materials Sciences, 15, 63 (1988).Google Scholar
9. Norton, M.G. and Carter, C.B. Appl. Phys. Lett. (1990) (submitted for publication).Google Scholar