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Optimization of the carbonized buffer layer for the growth of high quality single crystal SiC on Si

Published online by Cambridge University Press:  21 March 2011

T. Cloitre ,
N. Moreaud ,
P. Vicente ,
M. Sadowski ,
M. Moret  and
R. L. Aulombard
T. Cloitre
Affiliation:
Groupe d'Etudes des Semiconducteurs, Université Montpellier II, 34095 Montpellier cedex 5, France.
N. Moreaud
Affiliation:
Groupe d'Etudes des Semiconducteurs, Université Montpellier II, 34095 Montpellier cedex 5, France.
P. Vicente
Affiliation:
Present address: NOVASIC, Pombliere, 73600 Moutiers, France
M. Sadowski
Affiliation:
Groupe d'Etudes des Semiconducteurs, Université Montpellier II, 34095 Montpellier cedex 5, France.
M. Moret
Affiliation:
Groupe d'Etudes des Semiconducteurs, Université Montpellier II, 34095 Montpellier cedex 5, France.
R. L. Aulombard
Affiliation:
Groupe d'Etudes des Semiconducteurs, Université Montpellier II, 34095 Montpellier cedex 5, France.
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Abstract

Carbonized buffer layers were formed on Si (100) nominally oriented substrates with propane diluted in palladium purified hydrogen in a cold wall vertical reactor. Subsequent SiC layers were grown using silane and propane at atmospheric pressure. The growth temperature was ranging from 1150°C to 1350°C. The layers obtained were characterized by LT photoluminescence, IR reflectivity, X-ray diffraction, micro-Raman on cleaved edges, AFM imaging, and optical microscopy. Drastic influence on the layer surface morphology was evidenced depending on the transition step between the carbonization and the SiC epitaxial growth. As a result, we have developed a carbonization process leading to very high quality 3CSiC films grown at 1250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.12
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Camassel, J., J. Vac. Sci., B 16, 1648 (1998).Google Scholar
2. Kordina, O., Björketun, L.-O., Henry, A., Hallin, C., Glass, R.C., Hultman, L., Sundgren, J.-E. and Janzén, E., J. Cryst. Growth, 154, 303 (1995).Google Scholar
3. Cloitre, T., Moreaud, N., Vicente, P., Sadowski, M.L. and Aulombard, R.L., Mater. Sci. Forum, 353–356, 159 (2001).Google Scholar
4. Ishida, Y., Takahashi, T., Okumura, H. and Yoshida, S., Mater. Sci. Forum, 338–342, 253 (2000).Google Scholar
5. Sadowski, M.L., Grynberg, M., Witowski, A.M., Huant, S. and Martinez, G., Phys. Rev., B60, 10908 (1999).Google Scholar