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Optimization of GaN/AlGaN Quantum Wells for Ultraviolet Emitters

Published online by Cambridge University Press:  01 February 2011

A. Hangleiter ,
D. Fuhrmann ,
M. Greve  and
U. Rossow
A. Hangleiter
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany E-mail: a.hangleiter@tu-bs.de
D. Fuhrmann
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany E-mail: a.hangleiter@tu-bs.de
M. Greve
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany E-mail: a.hangleiter@tu-bs.de
U. Rossow
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany E-mail: a.hangleiter@tu-bs.de
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Abstract

We have studied GaN/AlGaN and GaInN/GaN quantum well structures grown on sapphire and SiC substrates using low-pressure MOVPE. The emission wavelength of the GaN/AlGaN QW's was varied in the 320–400 nm range and that of the GaInN/GaN QW's in the 390–480 nm range, by adjusting the QW width. Using temperature dependent resonant-excitation photoluminescence measurements we have determined the internal quantum efficiency (IQE) and analyzed its temperature dependence. For the GaN/AlGaN QW's we achieve a reasonable IQE of in excess of 5 % only at fairly high excitation power, while GaInN/GaN QW's provide IQE's of up to 46 % at rather low power density, indicating a much stronger role of defects for the former. While thermal activation energies are dominated by intrinsic mechanisms for GaInN/GaN QW's, lower activation barriers evident from the GaN/AlGaN data also hint at a more import role of defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y4.8
Copyright
Copyright © Materials Research Society 2004

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References

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