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Optimization and Transformation Analysis of Grain-Boundary-Location-Controlled Si Films

Published online by Cambridge University Press:  15 February 2011

H.J. Kim  and
James S. Im
H.J. Kim
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, NY 10027
James S. Im
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, NY 10027
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Abstract

By optimizing various experimental parameters, we were able to extend the width of the microstructually optimized regions in grain-boundary-location-controlled (GLC) Si films up to 10 μm. In situ transient reflectance (TR) measurements during the solidification process reveal that the underlying GLC transformation sequence is consistent with the artificially controlled super-lateral growth (ACSLG) scenario, from which the GLC process was developed and is being optimized. A definite change in the slope of the TR signal was found to appear at the transition between the vertical-and-lateral -growth and lateral-growth-only modes. Protrusions at the center of the GLC Si microstructure, which are observed in cross-sectional TEM micrographs and surface profile measurements, are formed as a result of the positive volume change associated with freezing of Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 401
Copyright
Copyright © Materials Research Society 1996

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References

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