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Optically Detected Magnetic Resonance of Zinc Interstitials and Frenkel Pairs in ZnSe

Published online by Cambridge University Press:  26 February 2011

G. D. Watkins
Affiliation:
Department of Physics, Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015, U.S.A
F. Rong
Affiliation:
Department of Physics, Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015, U.S.A
W. A. Barry
Affiliation:
Department of Physics, Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015, U.S.A
J. F. Donegan
Affiliation:
Department of Physics, Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015, U.S.A
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Abstract

Optical detection of magnetic resonance (ODMR) is reported for ZnSe irradiated by 2.5 MeV electrons in situ at 4.2K. Interstitial zinc atoms are detected in both isolated form and paired with zinc vacancies (Frenkel pairs) of many resolved discrete separations. The isolated interstitial produces a deep second donor state (+/++) at ∼Ec -0.8 eV and its activation energy for migration is estimated to be ∼0.6–0.7 eV. The Frenkel pairs give rise to efficient localized donor-acceptor recombination luminescence and the exchange interactions between the electron and hole on the two partners are measured directly by ODMR.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

Refrences

1.Watkins, G. D., in Deep Centers in Semiconductors, edited by Pantelides, S. T. (Gordon and Breach Science Publishers, New York, 1986) p. 147Google Scholar
2.Kennedy, T. A. and Wilsey, N. D., Phys. Rev. Lett. 41, 977 (1978).Google Scholar
3.Watkins, G. D., in Lattice Defects in Semiconductors 1974, edited by Huntley, F. A. (Inst. of Physics Conf. Se. No. 23, London, 1975) p. 338.Google Scholar
4.Lee, K. M., O'Donnell, K. P., and Watkins, G. D., Sol. St. Comm. 91, 881 (1981).Google Scholar
5.Taylor, A. L., Filipovich, G., and Lindeberg, G. K., Sol. St. Comm. 9, 945 (1971).Google Scholar
6.Herve, A. and Maffeo, B., Phys. Lett. A 32, 247 (1970).Google Scholar
7.Taylor, A. L., Filipovich, G. and Lindeberg, G. K., Sol. St. Comm. 8, 1359 (1970).Google Scholar
8.Galland, D. and Herve, A., Phys. Lett. A 33, 1 (1970).Google Scholar
9.Schneider, J. and Rafber, A., Sol. St. Comm. 5, 779 (1967).Google Scholar
10.Smith, J. M. and Vehse, W. H., Phys. Lett. A 31, 147 (1970).Google Scholar
11.DuVarney, R. C., Garrison, A. K., and Thorland, R. H., Phys. Rev. 188, 657 (1969).Google Scholar
12.Goltzene, A., Meyer, B., and Schwab, C., Phys. Stat. Sol. (b) 123, K125 (1984).Google Scholar
13.Deiri, M., Kana-ah, A., Cavenett, B. C., Kennedy, T. A., and Wilsey, N. D., J. Phys. C. 17, L793 (1984).Google Scholar
14.von Bardeleben, H. J. and Bourgoin, J. C., Phys. Rev. B 33, 2890 (1986).Google Scholar
15.Kennedy, T. A. and Spencer, M. G., Phys. Rev. Lett. 57, 2690 (1986).Google Scholar
16.Lee, K. M., these proceedings.Google Scholar
17.Lee, K. M., Dang, Le Si, and Watkins, G. D., in Defects and Radiation Effects in Semiconductors 1980, edited by Hasiguti, R. R. (Inst. Phys. Conf. Se. No. 59, London, 1981) p. 353.Google Scholar
18.Jeon, D., Gislason, H. P., and Watkins, G. D., Mat. Sci. Forum 10–12, 851 (1986).Google Scholar
19.Detweiler, R. M. and Kulp, B. A., Phys. Rev. 146, 513 (1966).Google Scholar
20.Rong, F. and Watkins, G. D., Phys. Rev. Lett. 56, 2310 (1986).Google Scholar
21.Rong, F. and Watkins, G. D., Phys. Rev. Lett. 58, 1486 (1987).Google Scholar
22.Schneider, J., Dischler, B., and Rallber, A., J. Phys. Chem. Solids 29, 451 (1968).Google Scholar
23. There are two available Td interstitial sites in the ZnSe lattice, one surrounded by four nearest neighbor Se atoms, the other by four Zn atoms. On a simple Zn++Se= ionic model, the stable zinc interstitial site should be that surrounded by four Se= ions.Google Scholar
24.Lee, K. M., PhD dissertation, Lehigh University 1983, unpublished.Google Scholar
25.Watkins, G. D., in Radiation Effects in Semiconductors 1976, edited by Urli, N. B. and Corbett, J. W. (Inst. Phys. Conf. Se. No. 31, London, 1977) p. 95.Google Scholar