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Optical Property Characterization of Silicon Quantum Wires

Published online by Cambridge University Press:  10 February 2011

D. P. Yu
Affiliation:
Department of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100871, China, yudp@pku.edu.cn
Z. G. Bai
Affiliation:
Department of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100871, China
Y. H. Zou
Affiliation:
Department of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100871, China
J. J. Wang
Affiliation:
Department of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100871, China
H. Z. Zhang
Affiliation:
Department of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100871, China
Y. Ding
Affiliation:
Department of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100871, China
S. Q. Feng
Affiliation:
Department of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100871, China
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Abstract

The recent success of bulk synthesis of pure nano-scale silicon quantum wires (SiQW's) enables us to evaluate their photoluminescence (PL) characteristics under ultra-violet photoexcitation. Intense multiple light emissions ranging from dark red to blue regions were revealed for as-grown and partially oxidized SiQW samples. The physical origin of the multiemissions is discussed on the basis of quantum confinements, or defect centers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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