Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-16T04:19:59.634Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Emission Related to Holes Confined in p-Type δ-Doped Layers in GaAs

Published online by Cambridge University Press:  10 February 2011

Q.X. Zhao ,
M. Willander ,
P.O. Holtz ,
W. Lu ,
H. F. Dou ,
S. C. Shen ,
G. Li  and
C. Jagadish
Q.X. Zhao
Affiliation:
Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and University of Göteborg, S-412 96 Göteborg, Sweden
M. Willander
Affiliation:
Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and University of Göteborg, S-412 96 Göteborg, Sweden
P.O. Holtz
Affiliation:
Department Physics, Linköping University, S-583 81 Linköping, Sweden
W. Lu
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yi Road, Shanghai 200083, China
H. F. Dou
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yi Road, Shanghai 200083, China
S. C. Shen
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yi Road, Shanghai 200083, China
G. Li
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT0200, Australia
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT0200, Australia
Get access

Abstract

We present an optical investigation of thin Zn-doped GaAs layers embedded in bulk GaAs, by means of stationary optical spectroscopy. The samples were grown by metalorganic vapor phase epitaxy (MOVPE) The concentration of doped Zn acceptors were aimed at 2×1020/cm3 in 4 nm wide doping regions. We observed a novel optical radiative transition (denoted as F-emission) appearing in photoluminescence (PL) spectra below the energy position of the transition between the free electrons and holes bound to acceptors in bulk GaAs. The F emission shows a strong dependence on excitation intensity and temperature. The energy position varies from 1.46 eV to 1.49 eV when the excitation density increases from about 40 mW/cm2 to 23 W/cm2. Our results indicate that this emission is related to the transition between spatially separated electrons and holes. The holes are located in the p-type Zn δ-doped region, while the electrons are located in the undoped GaAs region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 123
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kukushkin, I.V., von Klitzing, K., Ploog, K., Kirpichev, V.E., and Sheoel, B.N., Phys.Rev. B 40, 4179(1989).Google Scholar
2. Zhao, Q.X., Bergman, J.P., Holtz, P.O., Monemar, B., Hallin, C., Sundaram, M., Merz, J.L. and Gossard, A.C., Semicond. Science. Technol. 5, 884(1990).Google Scholar
3. Zhao, Q.X., Holtz, P.O., Monemar, B., E. Sörman, Chen, W.M., Hallin, C., Sundaram, M., Merz, J.L. and Gossard, A.C., Phys. Rev. B 46, 4352(1992).Google Scholar
4. Bergman, J.P., Zhao, Q.X., Holtz, P.O., Monemar, B., Sundaram, M., Merz, J. L. and Gossard, A.C., Phys. Rev. B 43, 4771(1991).Google Scholar
5. Weegels, L. M., Haverkort, J.E.M., Leys, M.R., and Wolter, J.H., Phys. Rev. B 46, 3886(1992).Google Scholar
6. Ploog, K., Hauser, M. and Fischer, A., Appl. Phys. A 45, 233(1988).Google Scholar
7. Schubert, E.F., Kuo, J.M., Kopf, R.F., Luftman, H.S., Hopkins, L.C., and Sauer, N. J., J. Apll. Phys. 67, 1969(1998).Google Scholar
8. Wagner, J., Ruiz, A. and Ploog, K., Phys. Rev. B 43, 12134(1991).Google Scholar
9. Richards, D., Wagner, J., Schneider, H., Hendorfer, G., Maier, M., Fisher, A. and Ploog, K., Phys. Rev. B 47, 9629(1993).Google Scholar
10. Schubert, E.F., Ullrich, B., Harris, T.D., and Cunningham, J.E., Phys. Rev. B 38, 8305(1988).Google Scholar
11. Schubert, E.F., Harris, T.D., Cunningham, J.E. and Jan, W., Phys. Rev. B 39, 11011(1989).Google Scholar
12. Levine, A., de Silva, E.C.F., Sipahi, G.M., Quivy, A.A., Scolfaro, L.M.R., Leite, J.R., Dias, I.F.L., Lauretto, E., de Oliveira, J.B.B., Meneses, E.A., and Oliveira, A.G., Phys. Rev. B 59, 4634(1999).Google Scholar
13. Zhao, Q.X., Willander, M., Holtz, P.O., Lu, W., Dou, H. F., Shen, S. C., Li, G. and Jagadish, C., Phys. Rev. B 60, R2193 (1999).Google Scholar
14. Reboredo, F.A., and Proetto, C.R., Phys. Rev. B 47, 4655(1993).Google Scholar