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Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry

Published online by Cambridge University Press:  10 February 2011

H. Yao ,
C. H. Yan ,
H. A. Jenkinson ,
J. M. Zavada ,
J. S. Speck  and
S. P. Denbaars
H. Yao
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Material Research, and Department of Electrical Engineering, Lincoln, NE 68588, hyao@ unl.edu
C. H. Yan
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Material Research, and Department of Electrical Engineering, Lincoln, NE 68588, hyao@ unl.edu
H. A. Jenkinson
Affiliation:
US Army ARDEC, Picatinny Arsenal, NJ 07806
J. M. Zavada
Affiliation:
US Army Research Office, Research Triangle Park, NC 27709
J. S. Speck
Affiliation:
University of California, Santa Barbara, CA 93106
S. P. Denbaars
Affiliation:
University of California, Santa Barbara, CA 93106
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Abstract

Variable angle spectroscopic ellipsometry (VASE) and transmission measurements have been employed to study the dielectric response of gallium nitride (GaN) thin films — an important material for light emitting diodes (LEDs) and laser diodes applications. The GaN films were grown by atomsphere pressure metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates (α-AI2O3). Room temperature VASE measurements were made, in the range of 0.75 to 5.5eV, at the angle of incidence of 73, 75, and 77 degree, respectively. Evidence of anisotropy is observed especially in the spectral range under the band gap (∼3.4 eV), reflecting the nature of wurtzite crystal structure of GaN. The ordinary dielectric function ε⊥(ω) of GaN were obtained through the analysis of transmission and VASE data in the range below and above the band gap. The thickness of these GaN films is also determined via the analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 805
Copyright
Copyright © Materials Research Society 1997

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References

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