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Optical devices based on anisotropically nanostructured silicon

Published online by Cambridge University Press:  01 February 2011

J. Diener ,
N. Künzner ,
E. Gross ,
D. Kovalev  and
M. Fujii
J. Diener
Affiliation:
Technische Universitäat München, Physik-Department E16, D-85747 Garching, Germany
N. Künzner
Affiliation:
Technische Universitäat München, Physik-Department E16, D-85747 Garching, Germany
E. Gross
Affiliation:
Technische Universitäat München, Physik-Department E16, D-85747 Garching, Germany
D. Kovalev
Affiliation:
Technische Universitäat München, Physik-Department E16, D-85747 Garching, Germany
M. Fujii
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657–8501, Japan
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Abstract

Anisotropic nanostructuring of bulk silicon (Si) leads to a significant optical anisotropy of single porous silicon (PSi) layers. A variation of the etching current in time allows a controlled modification of the porosity along the growth direction and therefore a three-dimensional variation of the refractive index (in plane an in depth). This technique can be important for photonic applications since it is the basis of a development of a variety of novel, polarization sensitive, silicon-based optical devices: retarders, dichroic Bragg Reflectors, dichroic microcavities and Si based polarizers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 797: Symposium W – Engineered Porosity for Microphotonics and Plasmonics , 2003 , W1.8
Copyright
Copyright © Materials Research Society 2004

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References

Referenzes

[1] Schilling, J., Müller, F., Matthias, S., Wehrspohn, R.B., Gösele, U., and Busch, K., Appl. Phys. Lett. 78, 1180 (2001)Google Scholar
[2] Cullis, A. G., Canham, L. T. and Calcott, P. D. J., J. Appl. Phys. 82, 909 (1997)Google Scholar
[3] Künzner, N., Kovalev, D., Diener, J., Gross, E., Yu. Timoshenko, V., Polisski, G., Koch, F. and Fujii, M. Optics Letters 26, 1265 (2001)Google Scholar
[4] Kovalev, D., Polisski, G., Diener, J., Heckler, H., Künzner, N., Yu. Timoshenko, V., Koch, F., Appl. Phys. Lett. 78, 916 (2001)Google Scholar
[5] Kovalev, D., Polisski, G., Diener, J., Heckler, H., Künzner, N., Koch, F. Phys. Stat. Sol. (a) 180, r8–r11 (2000)Google Scholar
[6] Diener, J., Künzner, N., Kovalev, D., Gross, E., Yu. Timoshenko, V., Polisski, G. and Koch, F., Appl. Phys. Lett. 78, 3887 (2001)Google Scholar
[7] Diener, J., Künzner, N., Kovalev, D., Gross, E., Koch, F., J. of Appl. Phys. 91, 6704 (2002)Google Scholar
[8] Diener, J., Künzner, N., Gross, E., Kovalev, D., Fujii, M., Optics Letters accepted for publicationGoogle Scholar