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Optical Constants of Annealed a-Si:H from Transmittance at Normal Incidence

Published online by Cambridge University Press:  21 March 2011

Atsutoshi Doi  and
Yoshiyuki Matsumoto
Atsutoshi Doi
Affiliation:
Department of Electrical Engineering, Faculty of Science and Engineering, Kinki University, Kowakae, Higashiosaka, Osaka 577–8502, Japan
Yoshiyuki Matsumoto
Affiliation:
Department of Electrical Engineering, Faculty of Science and Engineering, Kinki University, Kowakae, Higashiosaka, Osaka 577–8502, Japan
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Abstract

We study changes in the optical constants of a-Si:H films caused by the thermal annealing involved in solid phase crystallization. The aim is to examine the growth mechanism, since changes in refractive index are most probably caused by a change in the network structure. The refractive index change was studied from interference fringes in transmitted light at normal incidence, and shows differing dependence on temperature in different thermal ranges. DSC measurement was also performed to examine changes in the network structure with temperature. Changes in optical and thermal properties induced by an increase of temperature reveal frequent network changes of a-Si:H below 470°C and of a-Si in the range 470 to 570°C. We also found crystallization at about 570°C, and grain growth above the crystallization temperature. Knowledge of network changes in a-Si film allows orientation control by an external seed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.8.1
Copyright
Copyright © Materials Research Society 2002

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