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Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

U. Hommerich ,
J. T. Seo ,
Myo Thaik ,
J. D. MacKenzie ,
C. R. Abernathy ,
S.J. Pearton ,
R.G. Wilsont  and
J. M. Zavadat
U. Hommerich
Affiliation:
Hampton University, Department of Physics, Research Center for Optical Physics, Hampton, VA 23668, E-mail: hommeric@gprc.hamptonu.edu
J. T. Seo
Affiliation:
Hampton University, Department of Physics, Research Center for Optical Physics, Hampton, VA 23668, E-mail: hommeric@gprc.hamptonu.edu
Myo Thaik
Affiliation:
Hampton University, Department of Physics, Research Center for Optical Physics, Hampton, VA 23668, E-mail: hommeric@gprc.hamptonu.edu
J. D. MacKenzie
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
S.J. Pearton
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
R.G. Wilsont
Affiliation:
Consultant, Stevenson Ranch, CA 91381
J. M. Zavadat
Affiliation:
U.S. Army European Research Office, London, UK, NWl 5
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Abstract

We are currently engaged in a systematic study of the optical properties of Er doped III-nitrides prepared by metalorganic molecular beam epitaxy (MOMBE). Under below-gap excitation it was observed that GaN: Er samples with [O]∼1020 cm-3 and [C]∼1021 cm-3 luminesce at 1540 nm with an intensity of more than two orders of magnitude greater than samples with low oxygen and carbon concentrations (< 1019 cm-3). Associated with the different oxygen and carbon concentrations were different thermal quenching behaviors and below-gap absorption bands. Interestingly, for above-gap excitation only small differences in absolute Er3+ PL intensity and quenching behavior were observed for samples of varying 0 and C content. Initial lifetime studies were performed and showed a rather unusual short decay time of ∼100 μts at room temperature. In order to gain more insight in the Er3+ PL, a comparison of the integrated PL intensity and lifetime was performed for the temperature range 15-500K. The result reveals that the Er3+ PL quenches above room temperature due to the onset of non-radiative decay and the reduction in excitation efficiency. All samples were also investigated for visible luminescence. Red luminescence was observed from GaN: Er on sapphire substrates under below-gap excitation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G11.6
Copyright
Copyright © Materials Research Society 1999

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