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Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

Published online by Cambridge University Press:  22 February 2011

Z. C. Feng ,
S. J. Chua ,
A. Raman  and
N.N. Lim
Z. C. Feng
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
S. J. Chua
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, S0511, Singapore
A. Raman
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, S0511, Singapore
N.N. Lim
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, S0511, Singapore
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Abstract

A variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 53
Copyright
Copyright © Materials Research Society 1994

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References

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