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Operational Characteristics of GaSe Crystals for Mid-IR and Far-IR Applications

Published online by Cambridge University Press:  10 February 2011

N. C. Fernelius ,
F. K. Hopkins ,
N. B. Singh ,
D. Suhre ,
M. Marable ,
R. H. Hopkins ,
R. Meyer  and
P. Mui
N. C. Fernelius
Affiliation:
Materials Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433
F. K. Hopkins
Affiliation:
Materials Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433
N. B. Singh
Affiliation:
Northrop Grumman Corporation, STC-ESSD, 1350 Beulah Road, Pittsburgh, PA 15253
D. Suhre
Affiliation:
Northrop Grumman Corporation, STC-ESSD, 1350 Beulah Road, Pittsburgh, PA 15253
M. Marable
Affiliation:
Northrop Grumman Corporation, ESID, Rolling Meadows, IL 60008
R. H. Hopkins
Affiliation:
Northrop Grumman Corporation, STC-ESSD, 1350 Beulah Road, Pittsburgh, PA 15253
R. Meyer
Affiliation:
Northrop Grumman Corporation, ESID, Rolling Meadows, IL 60008
P. Mui
Affiliation:
Northrop Grumman Corporation, ESID, Rolling Meadows, IL 60008
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Abstract

GaSe has a number of attractive properties for nonlinear optical applications including large birefringence for ease in phase matching. Its biggest drawback is its mechanical properties. GaSe has a strong tendency to cleave along the <100> plane which has made it difficult to grow and fabricate. We have developed a method to modify GaSe by structurally strengthening the material by doping. We have synthesized large boules of GaSe reacted mixtures and grown centimeter size single crystals by the Bridgman technique. Depending on the dopant and crystal quality, SHG measurements indicate a deff, of 51 to 76 pm/V. SHG power levels were theoretically calculated and appear to be in good agreement with the experimental data. The measured performance of crystals for the fourth harmonic generation and laser damage threshold are also reported in this paper. The damage threshold was greater than 2.8 J/cm2 and 85 KW/cm2 at the surface of the crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 567
Copyright
Copyright © Materials Research Society 1998

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