Hostname: page-component-7c8c6479df-p566r Total loading time: 0 Render date: 2024-03-29T04:54:41.780Z Has data issue: false hasContentIssue false

Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

Published online by Cambridge University Press:  10 February 2011

Jinning Liu
Affiliation:
Varian Semiconductor Equipment Associates, Gloucester, MA
Kevin S. Jones
Affiliation:
SWAMP center, University of Florida, Gainesville, FL
Daniel F. Downey
Affiliation:
Varian Semiconductor Equipment Associates, Gloucester, MA
Sandeep Mehta
Affiliation:
Varian Semiconductor Equipment Associates, Gloucester, MA
Get access

Abstract

To meet the challenge of achieving ultra shallow p+/n source/drain extension junctions for 0.1 Oim node devices, ultra low energy boron implant and advanced annealing techniques have been explored. In this paper, we report the extended defect and boron diffusion behavior with various implant and annealing conditions. Boron implants were performed at energies from 0.25keV to lkeV and doses of 5 × 1014 cm−2 and 1 × 1015cm−2. Subsequent anneals were carried out in nitrogen ambient. The effect of energy, dose and oxide capping on extended defect formation and enhanced dopant diffusion was examined. It was observed that a thin screen oxide layer (35Å), grown prior to implantation, reduces the concentration of dopant in the Si by a significant amount as expected. This oxide also reduces the dislocation loops in the lattice and lowers diffusion enhancement of the dopant during annealing. The final junction depth can be optimized by using a low thermal budget spike anneal in a controlled oxygen ambient.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Angelucci, R., Negrini, P. and Solmi, S., Appl. Phys. Lett. 49, 1468, (1986).Google Scholar
2. Lilak, A. D., Earles, S.K., Jones, K. S., Law, M. E., Giles, M. D., IEDM Tech. Dig. P.493, 1997.Google Scholar
3. Agarwal, A., Eaglesham, D. J., Gossman, H. J., Pelaz, L., Hemer, S. B., Jacobson, D. C., Haynes, T. E., Erokhin, Y. and Simonton, R., IEDM Tech. Dig. P. 167, 1997.Google Scholar
4. Kinoshita, H., Lo, G. Q., Kwong, D. L. and Novak, S., J. Electrochem. Soc. 140 (1), 248 (1993).Google Scholar
5. Liu, J., Krishnamoorthy, V., Gossman, H. J., Rubin, L., Law, M. E. and Jones, K. S., J. Appl. Phys. 81 (4), 1656 (1997).Google Scholar
6. Zhang, L. H., Jones, K. S., Chi, P. H. and Simons, D. S., Appl. Phys. Lett. 67 (14), 2025 (1995).Google Scholar
7. Downey, D. F., Chow, J. W., Lerch, W., Niess, J. and Marcus, S. D., Mat. Res. Soc. Symp. Proc. Vol. 525, p. 263, 1998.Google Scholar