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On the Mechanism of Hydrogen Diffusion in Si Solar Cells Using PECVD SiN:H

Published online by Cambridge University Press:  17 March 2011

B.L. Sopori ,
Y. Zhang ,
R. Reedy ,
K. M. Jones ,
Y. Yan ,
M. M. Al-Jassim ,
J. Kalejs  and
B. Bathey
B.L. Sopori
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Y. Zhang
Affiliation:
Bioarray Solutions, Warren, NJ 07059
R. Reedy
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
K. M. Jones
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Y. Yan
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
M. M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
J. Kalejs
Affiliation:
RWE Schott Solar, Billerica, MA 01821
B. Bathey
Affiliation:
RWE Schott Solar, Billerica, MA 01821
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Abstract

A mechanism for transport and diffusion of H in a silicon solar cell by PECVD SiN:H process is proposed. Plasma-induced surface damage “stores” H during the nitride deposition, which is driven into the bulk of the solar cell during metal-contact firing. Theoretical and experimental results are given that verify this mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 813: Symposium G – Hydrogen in Semiconductors , 2004 , H6.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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