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On determination of properties of ultrathin and very thin silicon oxide layers by FTIR and X - ray reflectivity

Published online by Cambridge University Press:  01 February 2011

Martin Kopani ,
Matej Jergel ,
Hikaru Kobayashi ,
Masao Takahashi ,
Robert Brunner ,
Milan Mikula ,
Kentarou Imamura ,
Stanislav Jurecka  and
Emil Pincik
Martin Kopani
Affiliation:
martin.kopani@gmail.com, Comenius University, School of medicine, Sasinkova 4, Bratislava, 811 08, Slovakia, 00421259357454, 00421259357592
Matej Jergel
Affiliation:
matej.jergel@savba.sk, Slovak Academy of Science, Institute of Physics, Dubravska cesta 9, Bratislava, 845 11, Slovakia
Hikaru Kobayashi
Affiliation:
h.kobayashi@sanken.osaka-u.ac.jp, Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Masao Takahashi
Affiliation:
h.kobayashi@sanken.osaka-u.ac.jp, Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Robert Brunner
Affiliation:
takahasi@sanken.osaka-u.ac.jp, Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Milan Mikula
Affiliation:
robert.brunner@savba.sk, Slovak Academy of Science, Institute of Physics, Dubravska cesta 9, Bratislava, 845 11, Slovakia
Kentarou Imamura
Affiliation:
milan.mikula@stuba.sk, Slovak University of Technology, Faculty of Chemical and Food Technology, Department of Grafic Art Technology and Applied Photochemistry, Radlinskeho 9, Bratislava, 812 37, Slovakia
Stanislav Jurecka
Affiliation:
imamura@sanken.osaka-u.ac.jp, Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Emil Pincik
Affiliation:
jurecka@lm.uniza.sk, University of Zilina, Faculty of Electrical Engineering, Department of Engineering Fundamentals, kpt. J. Nalepku 1390, Liptovsky Mikulas, 031 01, Slovakia
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Abstract

We analyze properties of ultra-thin SiO2 + very thin SiOx double layer structure formed on high-doped n-type Si (100) wafers using FTIR, X-ray reflectivity and AFM methods. The observed absorption band around 1230 cm−1 is attributed to the longitudinal optical mode of SiOx precipitates incorporated in silicon matrix. In particular, the corresponding peak positions indicate that there are precipitates of SiOx with x >1.8. The absorption band around 1070 cm−1 is attributed to the Si–O–Si stretching bond. This position is characteristic for stoichiometric SiO2. From the results it can be concluded that differently shaped particles co-exist in the samples. This assumption is supported by the oxide density measurements performed by FTIR and X-ray reflectivity. We determined density of oxide layers, roughness of corresponding interfaces, and surface roughness by the X-ray reflectivity. The obtained values were compared with those determined by FTIR and AFM. Additionally, we present the results of multifractal analysis on a complete set of six samples.

Keywords

optical propertiesthin filmx-ray reflectivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A07-03
Copyright
Copyright © Materials Research Society 2008

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References

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