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Observation Of Native Ga Vacancies In Gan By Positron Annihilation

Published online by Cambridge University Press:  10 February 2011

K. Saarinen ,
T. Laine ,
S. Kuisma ,
J. Nissilä ,
P. Hautojärvi ,
L. Dobrzynski ,
J. M. Baranowski ,
K. Pakula ,
R. Stepniewski  and
M. Wojdak
...Show all authors
K. Saarinen
Affiliation:
Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland
T. Laine
Affiliation:
Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland
S. Kuisma
Affiliation:
Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland
J. Nissilä
Affiliation:
Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland
P. Hautojärvi
Affiliation:
Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland
L. Dobrzynski
Affiliation:
Institute of Physics, Warsaw University Branch, Lipowa 41, 15–424 Bialystok and Soltan Institute of Nuclear Studies, 05-400 Otwock - Swierk, Poland
J. M. Baranowski
Affiliation:
Institute of Experimental Physics, University of Warsaw, 00-681 Warsaw, Poland
K. Pakula
Affiliation:
Institute of Experimental Physics, University of Warsaw, 00-681 Warsaw, Poland
R. Stepniewski
Affiliation:
Laboratory of Physics, Helsinki Univ. of Technology, P. O. Box 1100, 02015 HUT, Finland
M. Wojdak
Affiliation:
Institute of Experimental Physics, University of Warsaw, 00-681 Warsaw, Poland
A. Ysmolek
Affiliation:
Institute of Experimental Physics, University of Warsaw, 00-681 Warsaw, Poland
T. Suski
Affiliation:
UNIPRESS, Polish Academy of Sciences, 01-142 Warsaw, Poland
M. Leszczynski
Affiliation:
UNIPRESS, Polish Academy of Sciences, 01-142 Warsaw, Poland
I. Grzegory
Affiliation:
UNIPRESS, Polish Academy of Sciences, 01-142 Warsaw, Poland
S. Porowski
Affiliation:
UNIPRESS, Polish Academy of Sciences, 01-142 Warsaw, Poland
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Abstract

Positron annihilation experiments have been performed to identify native point defects in GaN bulk crystals as well as in epitaxial layers. The results show that Ga vacancies are present at concentrations of 1017 – 1018 cm−3 in undoped GaN bulk crystals and layers, whereas the Mgdoped samples are free of Ga vacancies. The Ga vacancies are negatively charged and their concentration correlates with the intensity of the yellow luminescence. We conclude that the Ga vacancies contribute to the electrical compensation of n-type GaN and their acceptor levels are involved in the yellow luminescence transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 757
Copyright
Copyright © Materials Research Society 1998

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References

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