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Numerical Simulation of Zone-Melting Recrystallization of Thin Silicon Films With A Tungsten Halogen Lamp
Published online by Cambridge University Press: 28 February 2011
Abstract
A two dimensional numerical simulation of incandescent lamp Zone-Melting Recrystallization (ZMR) was performed. A parametric study examined the thermal effects of lamp intensity, susceptor temperature, and ambient reflectivity, on the melt zone. The melt zone was found to vary linearly with lamp intensity and parabolically with susceptor temperature and ambient reflectivity.
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- Copyright © Materials Research Society 1992