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Numerical Modeling and Experimental Measurements of Pulsed Ion Beam Surface Treatment

Published online by Cambridge University Press:  10 February 2011

Michael O. Thompson
Affiliation:
Dept. of Materials Science, Cornell University, Ithaca, NY, 14853
T. J. Renk
Affiliation:
Sandia National Laboratories, Dept 9521, Albuquerque, NM, 87185
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Abstract

Pulsed ion beam treatment of materials provides an attractive alternative to pulsed laser processing for near surface modification of semiconductors, metals and polymers. The transfer of energy to the sample occurs by electronic and nuclear stopping over depths extending to several microns depending on ion species and voltage. A numerical code for modeling the melt and solidification behavior of materials under ion beam processing has been developed. The code and parameter extraction procedures were validated experimentally by comparing simulations with experimental measurements of the melt duration in silicon. The sensitivity of the melt behavior to variations in the beam properties was also investigated. The quiescent nature of the melt was confirmed by measurements of the diffusion of arsenic in the melt. These results demonstrate that simulations of the ion beam treatment can quantitatively match experimental results with no adjustable parameters.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Peercy, P. S., Thompson, M. O. and Tsao, J. Y., Appl. Phys. Lett. 47, 244 (1985).Google Scholar
[2] Hoglund, D. E., Aziz, M. J., Stiffler, S. R., Thompson, M. O., Tsao, J. Y. and Peercy, P. S., J. Crys. Growth 109, 107 (1991)Google Scholar
[3] Cullis, A. G., Webber, H. C., Poate, J. M. and Simons, A. L., Appl. Phys. Lett. 38, 800 (1981).Google Scholar
[4] Smith, P. M. and Aziz, M. J., Acta Metall. Mater. 42, 3515 (1994).Google Scholar
[5] Mazzoldi, P., Rose, L. F. Dona dalle and Sood, D. K., Radiation Effects 63, 105 (1982).Google Scholar
[6] Smith, P.M., Carey, P. G. and Sigmon, T.W., Appl. Phys. Lett. 70, 342 (1997)Google Scholar
[7] Goldman, L. M. and Aziz, M. J., J. Mater. Res. Proc. 35, 257 (1985).Google Scholar
[8] Stiffler, S. R., Thompson, M. O. and Peercy, P. S., Phys. Rev. B 43, 9851–5 (1991)Google Scholar
[9] Fastow, R., Maron, Y. and Mayer, J. W., Phys. Rev. B 31, 893 (1985); S. A. Chistjakov et al., Physics Letters 131, 73 (1988).Google Scholar
[10] Greenly, J. B., Ueda, M., Rondeau, G. D. and Hammer, D. A., J. Appl. Phys. 63, 1872 (1988).Google Scholar
[11] Uttormark, M. J., Ph.D Thesis, Cornell University, 1992.Google Scholar
[12] TRIM90, Ziegler, J. F., IBM Watson, T. J. Research Center, Yorktown Heights, NY.Google Scholar
[13] Kittl, J. A., Aziz, M. J., Brunco, D. P. and Thompson, M. O., J. Crys. Growth 148, 172182 (1995).Google Scholar