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Nucleation of Voids in Thin-Film Interconnects Through Crystallographic Slip

Published online by Cambridge University Press:  10 February 2011

Y.-L. Shen
Y.-L. Shen*
Affiliation:
Department of Mechanical Engineering, The University of New Mexico, Albuquerque, NM 87131, shenyl@slider.unm.edu
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Abstract

A two-dimensional void nucleation model in thin-film metal interconnects is proposed. The model is based on the evolution of stress and deformation fields obtained from numerical modeling. Interface flaws between the metal and the surrounding dielectric are assumed to exist. A unique pattern of shear stress resolved on the slip systems of the metal is found. A model of dislocation slip is constructed in accord with the evolution of the shear mode. The mechanism of crystallographic slip is such that lateral thinning of the metal line at the debond region, together with the slip steps produced at the edges of debond lead to a net transport of atoms away from the interface defect, and a physical void is thus formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 255
Copyright
Copyright © Materials Research Society 1998

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References

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