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Nucleation & Growth of Defects in SOI Materials

Published online by Cambridge University Press:  26 February 2011

G. C. M. Silvestre ,
R. A. Moore  and
B. J. Kennedy
G. C. M. Silvestre
Affiliation:
Department of Microelectronics and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland.
R. A. Moore
Affiliation:
Department of Microelectronics and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland.
B. J. Kennedy
Affiliation:
Department of Microelectronics and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland.
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Abstract

To produce Silicon-On-Insulator (SOI) materials with thin Si overlayer, sacrificial oxidation is often used. This creates defects which have adverse effects on device performance. It has been observed that Stacking Faults (SFs) in thin Separation-by-IMplantation-of-OXygen (SIMOX) or Bonded-and-Etched-back-SOI (BESOI) films of less than 600 Å, do not shrink as expected during neutral Ar anneals. Shrinkage of SFs in standard bulk substrates with different capping layers has been investigated to promote the understanding of the Si/Si02 interface effects on Si interstitial incorporation during anneals. The activation energy for growth and shrinkage of SOI samples thicker than 800 A was found to be the same as bulk Si: 2.3 eV (growth) and 4.6 eV (shrinkage). Bulk silicon implanted with low doses of oxygen, permitted investigation of the nucleation sites of SFs in SIMOX where oxygen precipitates are believed to act as nuclei for SFs. A five step etch procedure was modified to reveal the defects in very thin SOI and an automatic defect counting system developed at T.C.D. permitted fast and reliable measurements of size and density of the defects. It appears that the two Frank partial dislocations that bound SFs, are pinned at the two Si/Si02 interfaces for both SIMOX and BESOI films thinner than 500 Å. In thicker SOI, the mechanisms for growth and shrinkage of SFs are the same as for bulk silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 121
Copyright
Copyright © Materials Research Society 1995

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