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Nucleation, Growth and Ostwald Ripening of Cosi2 Precipitates During Co Ion Implantation In Si

Published online by Cambridge University Press:  21 February 2011

S. Reiss ,
M. O. Ruault ,
J. Clayton ,
O. Kaitasov ,
K.-H. Heinig  and
H. Bernas
S. Reiss
Affiliation:
Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden, Germany
M. O. Ruault
Affiliation:
CSNSM-IN2P3, 91405-Orsay Campus, France
J. Clayton
Affiliation:
CSNSM-IN2P3, 91405-Orsay Campus, France
O. Kaitasov
Affiliation:
CSNSM-IN2P3, 91405-Orsay Campus, France
K.-H. Heinig
Affiliation:
Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden, Germany
H. Bernas
Affiliation:
CSNSM-IN2P3, 91405-Orsay Campus, France
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Abstract

The experimental conditions during the implantation step of Ion Beam Synthesis influence crucially the formation of a buried structure in subsequent annealing steps. Due to of the complexity of the in-beam nucleation and evolution of precipitates of new phases there is still a low level of understanding. In this paper we present results of direct experimental investigations as well as results of computer simulations of in-beam nucleation and growth. The evolution of an ensemble of C0SÌ2 precipitates is mainly controlled by nucleation and diffusion. The observed decrease of the nucleation rate at high fluences can be explained by the decrease of the supersaturation of implanted atoms due to diffusion towards earlier nucleated precipitates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 183
Copyright
Copyright © Materials Research Society 1995

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