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The Nucleation and Growth of GaAs on Si

Published online by Cambridge University Press:  28 February 2011

J. S. Harris Jr. ,
S. M. Koch  and
S. J. Rosner
J. S. Harris Jr.
Affiliation:
Stanford University, Department of Electrical Engineering, Mccullough 208, Stanford, CA
S. M. Koch
Affiliation:
Stanford University, Department of Electrical Engineering, Mccullough 208, Stanford, CA
S. J. Rosner
Affiliation:
Stanford University, Department of Electrical Engineering, Mccullough 208, Stanford, CA also with Hewlett-Packard Circuit Technology Group, Deer Creek Road, Palo Alto, CA 94306
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Abstract

Substantial progress has been realized in both understanding the nucleation and growth of GaAs/Si and demonstration of device application of this technology. In this paper, we review the recent progress in the role of the Si surface, initial nucleation, the GaAs/Si interface, GaAs thick layer growth and defect generation and control in the GaAs layer. This last area is the remaining area where substantial progress is still required. Several new approaches for defect control are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 3
Copyright
Copyright © Materials Research Society 1987

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