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N-Type Silicon Films Produced by Hot Wire Technique

Published online by Cambridge University Press:  17 March 2011

Isabel M. M. Ferreira ,
Ana M. F. Cabrita ,
Elvira M. C. Fortunato  and
Rodrigo F. P. Martins
Isabel M. M. Ferreira
Affiliation:
CENIMAT, Departamento de Ciência dos Materiais da Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP-UNINOVA, Quinta da Torre, 2825-114 Caparica, Portugal
Ana M. F. Cabrita
Affiliation:
CENIMAT, Departamento de Ciência dos Materiais da Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP-UNINOVA, Quinta da Torre, 2825-114 Caparica, Portugal
Elvira M. C. Fortunato
Affiliation:
CENIMAT, Departamento de Ciência dos Materiais da Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP-UNINOVA, Quinta da Torre, 2825-114 Caparica, Portugal
Rodrigo F. P. Martins
Affiliation:
CENIMAT, Departamento de Ciência dos Materiais da Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP-UNINOVA, Quinta da Torre, 2825-114 Caparica, Portugal
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Abstract

The role of the deposition pressure (p) and the type of filaments (tungsten, W or tantalum, Ta) used to produce large area (10cm×10cm) n-type Si:H films by hot wire chemical vapour (HW-CVD) deposition technique was investigated. The data show that the electro-optical properties of the films produced are dependent on the gas pressure used. In the pressure range of 1×10-3 Torr to 1.0 Torr, the room dark conductivity (σd) varies from 1×10-8 to 2 S/cm for films produced at the same hydrogen dilution and filament temperature (Tfil.). On the other hand, the hydrogen concentration (CH) decreases from 10% to 2%, while the growth rate (R) shows an exponential increase, from 1 to 9 Å/s. The SIMS analysis, within the detection limits, does not reveal the existence of any significant W or Ta contamination in the films produced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A6.5
Copyright
Copyright © Materials Research Society 2000

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References

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