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n-Type Diamond Growth by Phosphorus Doping

Published online by Cambridge University Press:  01 February 2011

Hiromitsu Kato ,
Toshiharu Makino ,
Satoshi Yamasaki  and
Hideyo Okushi
Hiromitsu Kato
Affiliation:
hiromitsu.kato@aist.go.jp, AIST, Nanotechnology Research Institute, 1-1-1 umezono, Tsukuba, 305-8568, Japan, +81-29-861-3461, +81-29-861-2773
Toshiharu Makino
Affiliation:
toshiharu-makino@aist.go.jp, AIST, Nanotechnology Research Institute, 1-1-1 umezono, Tsukuba, 305-8568, Japan
Satoshi Yamasaki
Affiliation:
s-yamasaki@aist.go.jp, AIST, Nanotechnology Research Institute, 1-1-1 umezono, Tsukuba, 305-8568, Japan
Hideyo Okushi
Affiliation:
h.okushi@aist.go.jp, AIST, Nanotechnology Research Institute, 1-1-1 umezono, Tsukuba, 305-8568, Japan
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Abstract

Phosphorus doping on (001)-oriented diamond is introduced and compared with results achieved on (111) diamond. Detailed procedures, conditions, doping characteristics, and recent electrical properties of (001) phosphorus-doped diamond films are described. Now the highest mobility is reached to be ∼780 cm2/Vs at room temperature. The carrier compensation ratio, which is still high around 50-80 %, is the most important issues for (001) phosphorus-doped diamond to improve its electrical property. The origin of compensators in phosphorus-doped diamond is investigated, while yet to be identified.

Ultraviolet light emitting diode with p-i-n junction structure is also introduced using (001) n-type diamond. A strong UV light emission at around ∼240 nm is observed even at room temperature. High performance of diamond UV-LED is demonstrated.

Keywords

chemical vapor deposition (CVD) (deposition)diamonddopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1039: Symposium P – Diamond Electronics–Fundamentals to Applications II , 2007 , 1039-P05-01
Copyright
Copyright © Materials Research Society 2008

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