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A Novel Technique For Rtp Annealing Of Compound Semiconductors

Published online by Cambridge University Press:  10 February 2011

M. Fu ,
V. Sarvepalli ,
R. K. Singh ,
C. R. Abernathy ,
X. Cao ,
S. J. Pearton  and
J. A. Sekhar
M. Fu
Affiliation:
Micropyretics Heaters International (MLI) Inc., 1776 Mentor Avenue, Cincinnati, OH 45212
V. Sarvepalli
Affiliation:
Micropyretics Heaters International (MLI) Inc., 1776 Mentor Avenue, Cincinnati, OH 45212
R. K. Singh
Affiliation:
Dept. of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
Dept. of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
X. Cao
Affiliation:
Dept. of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
Dept. of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
J. A. Sekhar
Affiliation:
Micropyretics Heaters International (MLI) Inc., 1776 Mentor Avenue, Cincinnati, OH 45212
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Abstract

We introduce for the first time a novel rapid thermal processing (RTP) unit called ZapperTM, which has recently been developed by MHI Inc. and the University of Florida for high temperature thermal processing of semiconductors. This ZapperTM unit is capable of reaching much higher temperatures (>1500 °C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. We have conducted implant activation annealing studies of Si+-implanted GaN thin films (with and without an AIN encapsulation layer) using the ZapperTM unit at temperatures up to 1500 °C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AIN encapsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the ZapperTM unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide bandgap compound semiconductors that require very high processing temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 345
Copyright
Copyright © Materials Research Society 1998

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