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Novel Stm Probe Assisted Site-Control of Quantum Dots With Nanometer Precision

Published online by Cambridge University Press:  10 February 2011

Hitoshi Nakamura ,
Shigeru Kohmoto ,
Tomonori Ishikawa  and
Kiyoshi Asakawa
Hitoshi Nakamura
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5-5 Tohkodai, Tsukuba, Ibaraki 300-2635, Japan
Shigeru Kohmoto
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5-5 Tohkodai, Tsukuba, Ibaraki 300-2635, Japan
Tomonori Ishikawa
Affiliation:
NEDO Industrial Technology Fellowship Researcher
Kiyoshi Asakawa
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5-5 Tohkodai, Tsukuba, Ibaraki 300-2635, Japan
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Abstract

We propose a novel site-control technique for strained quantum dots (QDs) based on nano-lithography using an STM integrated into a UHV STM/MBE multi-chamber system. A nano-scale deposit was formed on a GaAs surface by applying voltage between the GaAs surface and the tungsten tip of the STM. Since the deposit acted as a nano-mask, the subsequent GaAs growth formed a nano-hole just above the deposit. Subsequent InAs supply produced a QD on the hole site, and no QD was observed in any undesirable regions. We also observed the QD formation processes involved in the technique, based on step-by-step STM observations of the QD formation process. The observation directly revealed an InAs wetting layer formation with 1-ML thickness on the GaAs terraces followed by the QD formation in the Stranski-Krastanow growth mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 71
Copyright
Copyright © Materials Research Society 2000

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References

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