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Novel Plasma Control Method in PECVD for Preparing Microcrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

T. Nishimiya ,
M. Kondo  and
A. Matsuda
T. Nishimiya
Affiliation:
Thin Film Silicon Solar Cells Super Lab. Electrotechnical Laboratory Umezono, Tukuba-shi, Ibaraki 305, JAPAN MITSUBISHI HEAVY INDUSTRIES, LTD., Fukahori-machi, Nagasaki 851–03, Japan
M. Kondo
Affiliation:
Thin Film Silicon Solar Cells Super Lab. Electrotechnical Laboratory Umezono, Tukuba-shi, Ibaraki 305, JAPAN
A. Matsuda
Affiliation:
Thin Film Silicon Solar Cells Super Lab. Electrotechnical Laboratory Umezono, Tukuba-shi, Ibaraki 305, JAPAN
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Abstract

A novel plasma enhanced vapor deposition (PECVD) technique employing biased wall (BW) method has been developed for the enhanced growth rate of the hydrogenated microcrystalline silicon (μc-Si:H) films. Using this method, we have achieved a growth rate of more than 6Å/sec for the formation of μc-Si-H having an average grain size of 200Å; at 350°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 397
Copyright
Copyright © Materials Research Society 1997

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References

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