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A novel, nanocrystal (nc) based non-volatile memory device

Published online by Cambridge University Press:  17 March 2011

Jan W. De Blauwe ,
Marty L. Green ,
Tom W. Sorsch ,
Garry R. Weber ,
Jeff D. Bude ,
Andi Kerber ,
Fred Klemens ,
Young Kim ,
Michele L. Ostraat  and
Richard C. Flagan
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Jan W. De Blauwe
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Marty L. Green
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Tom W. Sorsch
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Garry R. Weber
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Jeff D. Bude
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Andi Kerber
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Fred Klemens
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Young Kim
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Michele L. Ostraat
Affiliation:
California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125, USA
Richard C. Flagan
Affiliation:
California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125, USA
Harry A. Atwater
Affiliation:
California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125, USA
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Abstract

This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F7.5.1
Copyright
Copyright © Materials Research Society 2001

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References

References:

[1] Lai, S. et al. “Design of an E2PROM memory cell less than 100 square microns using 1 micron technology” in IEDM Tech. Dig., p. 468, 1984.Google Scholar
[2] Tiwari, S. et al. “Volatile and non-volatile memories in silicon with nano-crystal storage” in IEDM Tech. Digest, p. 521, 1995.Google Scholar
[3] Yano, K. et al. “Room-temperature single-electron memory” IEEE T-ED, vol. 41, p. 1628, 1994.Google Scholar
[4] Hanafi, H. et al. “Fast and long retention time nano-crystal memory” in IEEE T-ED, vol 43, p. 1553, 1996.Google Scholar
[5] Tiwari, S. et al. “Single charge and confinement effects in nano-crystal memories” APL 69 (9), p. 1232, 1996.Google Scholar
[6] Okada, R. and Iijima, S.. “Oxidation property of silicon small particles” APL 58 (15), p. 1662, 1991.Google Scholar
[7] Saito, K. et al. “Narrow channel MOS memory based on silicon nano-crystals”, IEEE Silicon Nanoelectronics workshop, p. 17, 1998.Google Scholar