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Novel Model for the Optical Function: Application to Hexagonal Gan

Published online by Cambridge University Press:  21 March 2011

Y. Chan
Affiliation:
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong
Aleksandra B. Djurišić
Affiliation:
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong
E. Herbert Li
Affiliation:
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong
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Abstract

In this work we propose an analytical expression for the complex dielectric function that includes both discrete and continuum exciton effects. The model is based on the work of Elliott and the proposed model has been applied to modeling the experimental data for the hexagonal GaN. We have obtained good agreement with the experimental data. The model assumes Lorentzian broadening in order to obtain dielectric function equations in analytically closed form. We show that Lorentzian broadened dielectric function decays more slowly than the experimental data for hexagonal GaN at the low energy side. This indicates that the broadening of the absorption edge in GaN is not purely Lorentzian. The agreement with the experimental data can be improved using adjustable broadening modification.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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