Hostname: page-component-7c8c6479df-8mjnm Total loading time: 0 Render date: 2024-03-28T21:08:52.414Z Has data issue: false hasContentIssue false

Non-Destructive Measurements of III-V Semiconductor Device Structure by a Hard X-ray Microprobe

Published online by Cambridge University Press:  26 February 2011

F. Uchida
Affiliation:
Hitachi Central Research Laboratory, Kokubunji, Tokyo, 185
J. Shigeta
Affiliation:
Hitachi Central Research Laboratory, Kokubunji, Tokyo, 185
Y. SUZUKI
Affiliation:
Hitachi Advanced Research Laboratory, Hatoyama, Saitama, 350–03, Japan
Get access

Abstract

A non-destructive characterization technique featuring a hard X-ray Microprobe is demonstrated for lll-V semiconductor device structures. A GaAs FET with a 2 μm gate length is measured as a model sample of a thin film structure. X-ray scanning microscopic images of the FET are obtained by diffracted X-ray and fluorescence X-ray detection. Diffracted X-ray detection measures the difference in gate material and source or drain material as a gray level difference on the image due to the X-ray absorption ratio. Ni Ka fluorescence detection, on the other hand, provides imaging of 500 Å thick Ni layers, which are contained only in the source and drain metals, through non-destructive observation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Underwood, J. H., Thompson, A. C., Wu, Y. and Giauque, R. D., Nuclear Instr. Meth., A266, 296 (1988).Google Scholar
2. Thompson, A. C., Underwood, J. H. and Wu, Y., Nuclear Instr. Meth., A266, 296 (1988).Google Scholar
3. Suzuki, Y., Uchida, F. and Hirai, Y., Jpn. J. Appl. Phys., 28, L1660 (1988).Google Scholar
4. Suzuki, Y. and Uchida, F., Jpn. J. Appl. Phys., 30, 1127 (1991).Google Scholar
5. Kirkpatrick, P. and Baez, A. V., J. Opt. Soc. Am. 38, 766 (1948).Google Scholar
6. Moriyama, S., Uchida, F. and Seya, E., Opt. Eng., 27, 1008 (1988).Google Scholar
7. Uchida, F., Moriyama, S. and Seya, E., J. Jpn. Soc. Prec. Eng., 55, 179 (1989).Google Scholar
8. Uchida, F., Moriyama, S. and Suzuki, Y., J. Jpn. Soc. Prec. Eng., 57, 152 (1991).Google Scholar