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Non-Destructive and Whole Wafer Characterization of III-V Infrared Epitaxial Materials Prepared by Turbo Disk Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Z. C. Feng ,
M. Pelczynski ,
C. Beckham ,
P. Cooke ,
I. Ferguson  and
R. A. Stall
Z. C. Feng
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
M. Pelczynski
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
C. Beckham
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
P. Cooke
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
I. Ferguson
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
R. A. Stall
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
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Abstract

Multiple wafer growth of infrared III-V semiconductor materials of InSb and InGaAsP have been produced by metalorganic chemical vapor deposition technology employing a vertical reactor growth configuration with a high speed rotating disk. Three measurement techniques of sheet resistivity, Fourier transform infrared (FTIR) reflectance and photoluminescence have been used to characterize epitaxial films on wafers up to 4″ diameter. Mapping distributions of the film thickness, sheet resistivity, surface morphology, and PL peak wavelength with uniformities better than 1% are illustrated. Data from our 2900 runs are produced. Variations of the characteristic features of the film with the growth conditions are discussed. These whole wafer and non-destructive material characterization techniques tightly coupled with the epitaxial processes are necessary to realize the high quality and high uniformity growth of state-of-art materials in a production environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 13
Copyright
Copyright © Materials Research Society 1998

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