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Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides

Published online by Cambridge University Press:  10 February 2011

T. J. Schmidt ,
J. J. Song ,
S. Keller ,
U. K. Mishra ,
S. P. DenBaars  and
Wei Yang
T. J. Schmidt
Affiliation:
Center for Laser and Photonics Research and Department of Physics Oklahoma State University, Stillwater, Oklahoma 74078
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics Oklahoma State University, Stillwater, Oklahoma 74078
S. Keller
Affiliation:
Electrical and Computer Engineering and Materials Departments University of California, Santa Barbara, California 93106
U. K. Mishra
Affiliation:
Electrical and Computer Engineering and Materials Departments University of California, Santa Barbara, California 93106
S. P. DenBaars
Affiliation:
Electrical and Computer Engineering and Materials Departments University of California, Santa Barbara, California 93106
Wei Yang
Affiliation:
Honeywell Technology Center, 12001 State Highway 55, Plymouth, Minnesota 55441
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Abstract

We report the results of nondegenerate optical pump-probe absorption experiments performed on GaN and InGaN thin films and quantum wells under the conditions of strong optical band to band excitation. The evolution of the band edge in these materials was monitored as the number of photoexcited free carriers was increased beyond that required to achieve population inversion and observe stimulated emission. The band edge of InGaN is shown to exhibit markedly different high excitation behavior than that of GaN, explaining in part the reduction in stimulated emission threshold that typically accompanies the incorporation of indium into GaN to form InGaN. A comparison of the band edge absorption changes observed in pump-probe experiments to the gain spectra measured in variable-stripe gain experiments is also given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 433
Copyright
Copyright © Materials Research Society 1999

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References

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