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Nitrogen induced optical phonon shift in GaNyAs1-y studied by Raman Scattering

Published online by Cambridge University Press:  26 February 2011

Li-Lin Tay ,
David J. Lockwood  and
James A. Gupta
Li-Lin Tay
Affiliation:
National Research Council, Ottawa, Ontario, Canada K1A 0R6
David J. Lockwood
Affiliation:
National Research Council, Ottawa, Ontario, Canada K1A 0R6
James A. Gupta
Affiliation:
National Research Council, Ottawa, Ontario, Canada K1A 0R6
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Abstract

We present a Raman study of pseudomorphically strained epitaxial films of the ternary alloy GaNyAs1-y grown on GaAs(100) with y ranging from 0 to 0.06. The optical phonon Raman spectrum of the alloy displays a two-mode behavior. The GaAs-like first order modes for y = 0.06 are represented by the strong longitudinal optic (LO1) mode at 287.4 cm-1 and the weaker transverse optic (TO1) mode at 269.0 cm-1, while the GaN-like LO2 mode is observed at 475.6 cm-1. Two very broad disorder-induced acoustic bands are evident at 80 and 170 cm-1 due to atomic disorder within the crystalline network. Raman studies show that as the nitrogen concentration in the alloy increases, the GaAs-like LO1 band shifts linearly towards lower wavenumber while the linearly increasing GaN-like LO2 phonon band deviates from linearity at higher nitrogen concentration (y ≥ 0.03). The reason for the deviation of the LO2 phonon from linearity is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B11.5
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCE

1 Weyers, M., Sato, M. and Ando, T., Jpn. J. Appl. Phys., part 1 31, L853 (1992)Google Scholar
2 Yu, P.Y. and Cardona, M., Fundamentals of semiconductors: physics and material properties, 2nd ed., Springer, 1999 Google Scholar
3 Gupta, J.A., Wasilewski, Z.R., Riel, B.J., Ramsey, J., Aers, G.C., Williams, R.L., Sproule, G.I., Perovic, A., Perovic, D.D., Garanzotis, T. and SpringThorpe, A. J., J. Cryst. Growth 242, 141 (2002)Google Scholar
4 Lockwood, D.J., Dharma-wardana, M.W.C., Baribeau, J.-M., and Houghton, D.C., Phys. Rev. B. 35, 2243 (1987)Google Scholar
5 Mintairov, M., Blagnov, P.A., Melehin, V.G., Faleev, N.N., Tretyakov, V.M., Merz, J.L., Qiu, Y., Nikishin, S.A., and Temkin, H., Phys. Rev. B 56, 15836 (1997)Google Scholar
6 Prokofyeva, T., Sauncy, T., Seon, M., Holtz, M., Qiu, Y., Nikishin, S., and Temkin, H., Appl. Phys. Lett., 73, 1409 (1998)Google Scholar
7 Alt, H.C., Egorov, A.Y., Riechert, H., Wiedemann, B., Meyer, J.D., Michelmann, R.W., and Bethge, K., Appl. Phys. Lett. 77, 3331 (2000)Google Scholar
8 Seong, M.J., Hanna, M.C., Mascarenhas, A., Appl. Phys. Lett. 79, 3974 (2001)Google Scholar
9 Talwar, D. N., Physica E, 20, 321 (2004)Google Scholar