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Nitrogen in Crystalline Si

Published online by Cambridge University Press:  28 February 2011

Herman J. Stein
Herman J. Stein*
Affiliation:
Sandia National Laboratories, PO Box 5800, Albuquerque, New Mexico 87185
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Abstract

Use of N doping, N gas ambients and N implantation in Si processing has stimulated study of the incorporation and behaviour of N in Si. Studies of N-implanted Si and comparisons with melt-doped Si have shown that N pairing is the dominant mode for bonding of N into crystalline Si for a wide range of processing conditions. Studies have also shown that laser annealing quenches a small percentage of implanted N into a substitutional site. Nitrogen diffusion and aggregation have been shown to occur in N-implanted Si upon furnace annealing at temperatures >700°C and there is a simultaneous formation of shallow donors. Interactions between N and other impurities occur in both as-grown and ion-implanted Si. Additional studies are needed to describe more fully the electrical and structural consequences of N-N, Nimpurity and N-defect interactions in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 523
Copyright
Copyright © Materials Research Society 1986

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