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Nitrogen Implantation and Diffusion in Silicon

Published online by Cambridge University Press:  10 February 2011

Lahir Shaik Adam ,
Mark E. Law ,
Omer Dokumaci ,
Yaser Haddara ,
Cheruvu Murthy ,
Heemyong Park ,
Suri Hegde ,
Dureseti Chidambarrao ,
Steve Mollis  and
Tony Domenicucci
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Lahir Shaik Adam
Affiliation:
Software Analysis and Advanced Materials Processing (SWAMP) Center, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Mark E. Law
Affiliation:
Software Analysis and Advanced Materials Processing (SWAMP) Center, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Omer Dokumaci
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Yaser Haddara
Affiliation:
Software Analysis and Advanced Materials Processing (SWAMP) Center, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Cheruvu Murthy
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Heemyong Park
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Suri Hegde
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Dureseti Chidambarrao
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Steve Mollis
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Tony Domenicucci
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Chester Dziobkowski
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Kevin Jones
Affiliation:
Software Analysis and Advanced Materials Processing (SWAMP) Center, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Philip Wong
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Ralph Young
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
R. Srinivasan
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
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Abstract

Nitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 277
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Liu, C.T., Ma, Y., Becerro, J., Nakahara, S., Eaglesham, D.J. and Hillenius, S.J., IEEE Electron Device Letters, v 18, n3, 1997, pp. 105–107 Google Scholar
2. Liu, C.T., Lloyd, E.J., Ma, Yi, Du, M., Opila, R.L. and Hillenius, S.J., IEDM 96, 19.2, pp. 499–502 Google Scholar
3. Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J. and Poate, J.M., Appl. Phys. Lett., 65(18), 1994 Google Scholar
4. Zimmermann, H. and Ryssel, H., Appl. Phys. A, v55, 1992, pp.121–134 Google Scholar
5. Gösele, U., Frank, W. and Seeger, A, Appl. Phys, v23(4), 1980, pp.361–368 Google Scholar
6. Bronner, Gary B. and Plummer, James D., J. Appl. Phys. v61(12),1987, pp. 5286–5298 Google Scholar
7. Pavlov, P.V., Physica Status Solidi A, 35, 1976, pp. 11–36 Google Scholar