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Nitride Phosphors for Low Voltage Cathodoluminescence Devices

Published online by Cambridge University Press:  14 March 2011

Hisashi Kanie ,
Takahiro Kawano ,
Kose Sugimoto  and
Ryoji Kawai
Hisashi Kanie
Affiliation:
Dept of Applied Electronics, Science Univ of Tokyo, Noda, Chiba, 278-8510, JAPAN
Takahiro Kawano
Affiliation:
Dept of Applied Electronics, Science Univ of Tokyo, Noda, Chiba, 278-8510, JAPAN
Kose Sugimoto
Affiliation:
Dept of Applied Electronics, Science Univ of Tokyo, Noda, Chiba, 278-8510, JAPAN
Ryoji Kawai
Affiliation:
Dept of Applied Electronics, Science Univ of Tokyo, Noda, Chiba, 278-8510, JAPAN
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Abstract

Undoped and Zn doped InGaN microcrystals were synthesized by a two-step method. The InGaN microcrystals have a wurtzite structure and brownish body color. The InGaN samples prepared at 900°C did not contain a metal In phase. The InGaN:Zn microcrystals showed blue photoluminescence (PL) at 77K different from that of GaN:Zn. Reflectivity and photoluminescence excitation (PLE) measurement showed that the fundamental absorption edge of the InGaN:Zn phosphors is 3.47 eV, which implies that the In content in the InGaN:Zn phosphors is less than 0.2%. GaN:Zn and InGaN:Zn showed a Zn related PLE peak at 3.34 eV. InGaN and InGaN:Zn showed an In related PLE peak at 3.14 eV. When the InGaN:Zn samples were selectively excited at 3.15 eV, an In-related emission band centered at 2.2 eV emerged. The InGaN:Zn phosphors mounted on vacuum fluorescent displays (VFDs) showed room-temperature blue cathodoluminescence (CL) and the CL peak shifted slightly toward the low energy compared to that of the GaN:Zn phosphors because of the superimposed In related band. The InGaN:Zn phosphors had a luminance of 50 cd/m2 and a luminance efficiency of 0.03 lm/W at an anode voltage of 50 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q5.11.1
Copyright
Copyright © Materials Research Society 2000

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References

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