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A New Ultra-Low K ILD Material Based On Organic-Inorganic Hybrid Resins

Published online by Cambridge University Press:  01 February 2011

Ben Zhong
Affiliation:
Dow Corning Corporation, Midland, MI, USA
Herman Meynen
Affiliation:
Dow Corning Corporation, Seneffe, Belgium
Francesca Iocopi
Affiliation:
IMEC, Heverlee, Belgium Katholieke Universiteit Leuven, Belgium.
Ken Weidner
Affiliation:
Dow Corning Corporation, Midland, MI, USA
Stephane Mailhouitre
Affiliation:
IMEC, Heverlee, Belgium Katholieke Universiteit Leuven, Belgium.
Eric Moyer
Affiliation:
Dow Corning Corporation, Midland, MI, USA
Cory Bargeron
Affiliation:
Dow Corning Corporation, Midland, MI, USA
Paul Schalk
Affiliation:
Dow Corning Corporation, Midland, MI, USA
Alan Peck
Affiliation:
Dow Corning Corporation, Midland, MI, USA
Marleen Van Hove
Affiliation:
IMEC, Heverlee, Belgium
Karen Maex
Affiliation:
IMEC, Heverlee, Belgium Katholieke Universiteit Leuven, Belgium.
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Abstract

A ULK material based on a siloxane resin has been developed that can be processed using spin-coating and thermal cure to yield porous low-k films. The chemical bonds between the resin and porogen groups prevent the phase separation of the porogen from the resin during curing and lead to extremely small pores. The highly hydrophobic thin films made from this material displayed dielectric constant of 1.8, breakdown voltage of 4 MV/cm, a cohesive strength > 60 MPa, excellent crack resistance, and an average pore size of 2.2 nm by Positron Annihilation Lifetime Spectroscopy (PALS) and 2.5-3.0 nm by Ellipsometric Porosimetry (EP). In this paper, our strategy for designing low-k materials, the material properties and initial integration results for this new material will be discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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