Article contents
New Optical Transition at Thermal Donors in Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
We detect new luminescence lines in Czochralski-grown silicon after prolonged heat treatments at 450°C. The properties of the new optical transition are well explained by a thermal donor-free hole recombination. From the IR-absorption spectra measured on the same samples, we have evidence for an inhomogeneous distribution of the thermal donors. The spatial fluctuations of the thermal donors appear to be necessary for the new luminescence spectrum to emerge.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1986
References
REFERENCES
- 5
- Cited by