Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-18T01:58:18.658Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Model for Series Resistance of Amorphous Silicon Thin Film Transistor

Published online by Cambridge University Press:  21 February 2011

Yong S. Kim ,
Jin S. Park ,
Seong K. Lee ,
Jung R. Hwang ,
Hong S. Choi ,
Yearn I. Choi  and
Min K. Han
Yong S. Kim
Affiliation:
Dept. of Electrical Eng., Seoul Nat'l. Univ., Seoul 151–742, Korea
Jin S. Park
Affiliation:
Dept. of Electrical Eng., Seoul Nat'l. Univ., Seoul 151–742, Korea
Seong K. Lee
Affiliation:
Dept. of Electrical Eng., Seoul Nat'l. Univ., Seoul 151–742, Korea
Jung R. Hwang
Affiliation:
Dept. of Electrical Eng., Seoul Nat'l. Univ., Seoul 151–742, Korea
Hong S. Choi
Affiliation:
Dept. of Electrical Eng., Seoul Nat'l. Univ., Seoul 151–742, Korea
Yearn I. Choi
Affiliation:
Dept. of Electronic Eng., Ajou Univ., Suwon 440–749, Korea
Min K. Han
Affiliation:
Dept. of Electrical Eng., Seoul Nat'l. Univ., Seoul 151–742, Korea
Get access

Abstract

We presents a new model for the series resistance of an amorphous silicon (a-Si) thin film transistor (TFT) with an inverted-staggered configuration, considering the current spreading under the source and the drain contacts as well as the space charge limited current. The calculated results of our model have been in good agreements with the measured data over a wide range of applied voltage, gate-to-source and gate-to-drain overlap length, channel length, and operating temperature. Our model shows that the relative contribution of the series resistances to the current-voltage (I-V) characteristics of the a-Si TFT in the linear regime is more significant at low drain and high gate voltages, for short channel and small overlap length, and at low operating temperature, which has been verified successfully by the experimental measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 991
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ichikawa, K., Imaya, A., Matino, H., Aoki, T., Higuchi, T., and Oana, Y., SID 89 Digest May, 226.Google Scholar
[2] Powell, M.J., IEEE Trans, on Electron Dev., 36 2735 (1987).Google Scholar
[3] Troutman, R.R. and Libsch, F.R., IEDM 90 855.Google Scholar
[4] Powell, M.J. and Orton, J.W., Appl. Phvs. Lett., 45 171 (1984).CrossRefGoogle Scholar
[5] Shur, M., Hyun, C., and Hack, M., J. Appl. Phys., 59 2488 (1986).CrossRefGoogle Scholar
[6] Lampert, M.A. and Mark, P., Current Injection in Solids (Academic Press, New York, 1970).Google Scholar
[7] Chung, K.Y. and Neudeck, G.W., J. Appl. Phvs., 62 4617 (1987).CrossRefGoogle Scholar
[8] Choi, H.S., Park, J.S., Oh, C.H., Joo, I.S., Kim, Y.S., Han, M.K., Choi, Y.I., Yun, J.G., Park, W.K., and Kim, W.Y., MRS 91 Spring Meeting. Google Scholar