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New Lateral Field Emitter Arrays Inherently Integrated with Thin Film Transistor

Published online by Cambridge University Press:  10 February 2011

Moo-Sup Lim ,
Cheol-Min Park ,
Min-Koo Han  and
Yearn-Ik Choi
Moo-Sup Lim
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea, Phone : +82-2-880-7248, Fax : +82-2-873-0827, E-mail :, mkh@emlab.siu.ac.kr
Cheol-Min Park
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea, Phone : +82-2-880-7248, Fax : +82-2-873-0827, E-mail :, mkh@emlab.siu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea, Phone : +82-2-880-7248, Fax : +82-2-873-0827, E-mail :, mkh@emlab.siu.ac.kr
Yearn-Ik Choi
Affiliation:
School of Electrical Eng., Ajou Univ., Wonchun-dong, Suwon 442-749, Kyung-ki do, Korea
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Abstract

Abstarct

We have fabricated a new three-terminal lateral field emitter structure in which the anode current is limited by the channel current of undoped region. The new device exhibits an excellent stability of the emission current. The field emission characteristics of fabricated device have two modes. In the first mode below 89 V, the mechanism of emission is identical to that of conventional poly-Si emitters and, in the second mode above 89 V, the emission current is limited by the inversion charges in the channel, so stable anode current is maintained. Furthermore, the fabrication process of the device is very simple.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 9
Copyright
Copyright © Materials Research Society 1998

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References

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