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New Devices for the Production of Intense Pulsed Jets of CF2: Laser Spectroscopic Characterization

Published online by Cambridge University Press:  21 February 2011

Mark B. Knickelbein
Affiliation:
Department of Chemistry, Cornell University, Ithaca, New York 14853
Douglas A. Webb
Affiliation:
Department of Chemistry, Cornell University, Ithaca, New York 14853
Edward R. Grant
Affiliation:
Department of Chemistry, Cornell University, Ithaca, New York 14853
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Abstract

We report the development of two new sources for the production of intense pulsed jets of atomic and molecular free radicals. The present work applies these sources to the generation of the widely used semiconductor etchant, CF2, in each case characterizing the yield and internal energy distribution of this diradical by laser induced fluorescence. The methods employed modify a commercial high-vacuum compatible pulsed molecular beam valve to accept either a glow discharge or pyrolysis nozzle. The source compound for both systems is hexafluoropropylene oxide (HFPO). In each case measured yields of CF2 are high: For pyrolysis we find intensities as great as 5×1017 sr−1sec−1 representing nearly complete conversion of HFPO to CF2 + CF3CFO. The discharge source yields about an order of magnitude less CF2 intensity in a shorter beam-pulse which also contains ions and other atomic and molecular radicals. The vibrational energy distribution of the CF2 varies with source conditions, with the hottest CF2 produced by the pyrolysis source at high temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

1. Schmitt, J. P. M., J. Non-Cryst. Solids 59/60, 649 (1983).CrossRefGoogle Scholar
2. See for example Materials Research Society Symposium Proceeedings Vol. 17, “Laser Diagnostics and Photochemical Processing for Semiconductor Devices”, edited by Osgood, R. M., Brueck, S. R. J. and Schlossberg, H. F. (North-Holland, New York, 1983).Google Scholar
3. For a recent review, see: Gottscho, R. A. and Miller, T. A., Pure Appl. Chem. 56, 189 (1984).CrossRefGoogle Scholar
4. Schmitt, J. P. M., Gressier, P., Krishnan, M., DeRosny, G. and Perrin, J., Chem. Phys. 84, 281 (1984).Google Scholar
5. Roth, R. M., Spears, K. G. and Wong, G., Appl. Phys. Lett 45, 28 (1984).CrossRefGoogle Scholar
6. Lee, H. U., Deneufville, J. P. and Ovshinsky, S. R., J. Non-Cryst. Solids 59/60, 671 (1983).CrossRefGoogle Scholar
7. Donnelly, V. M., Flamm, D. L. and Collins, G., J. Vac. Sci. Technol. 21, 817 (1982).CrossRefGoogle Scholar
8. Hargis, P. J., Jr. and Kushner, M. J., Appl. Phys. Lett. 40, 779 (1982).Google Scholar
9. Reference 2, pp. 161–168.Google Scholar
10. Gottscho, R. A., Burton, R. H., Flamm, D. L., Donnelly, V. M. and Davis, G. P., J. Appl. Phys. 55, 2707 (1984).Google Scholar
11. For details on the valve see the NRC catalogue and: Adams, T. A., Rockney, B. H., Morrison, R. J. S. and Grant, E. R., Rev. Sci. Intrum. 52, 1469 (1981).Google Scholar
12. Mathews, C. W., Can. J. Phys. 45, 2355 (1967).CrossRefGoogle Scholar
13. King, D. S., Schenck, P. K. and Stephenson, J. C., J. Mol. Spec. 78, 1 (1979).Google Scholar
14. Altkorn, R. and Zare, R. N., Ann. Rev. Phys. Chem. 35, 265 (1984).CrossRefGoogle Scholar
15. Liu, K. and Parson, J. M., J. Chem. Phys. 67, 18 (1977).Google Scholar
16. Lenze, M. and Mele, A., J. Chem. Phys. 43,1974 (1965).CrossRefGoogle Scholar
17. The lowest temperature for which we hKe been able to observe signal is 495 K. By the calculation presented in the text this would correspond to a conversion fraction of approximately 0.5 percent.Google Scholar