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Neutron Activation Measurements of As and Ga Loss During Transient Annealing of Gaas

Published online by Cambridge University Press:  15 February 2011

A. Rose ,
J.T.A. Pollock ,
M.D. Scott ,
F.M. Adams ,
J.S. Williams  and
E.M. Lawson
A. Rose
Affiliation:
Csiro, Division Of Chemical Physics, L.H.R.L., N.S.W. 2232. Australia
J.T.A. Pollock
Affiliation:
Csiro, Division Of Chemical Physics, L.H.R.L., N.S.W. 2232. Australia
M.D. Scott
Affiliation:
Csiro, Division Of Chemical Physics, L.H.R.L., N.S.W. 2232. Australia
F.M. Adams
Affiliation:
Faculty Of Engineering, R.M.I.T., Vic. 3000.
J.S. Williams
Affiliation:
Faculty Of Engineering, R.M.I.T., Vic. 3000.
E.M. Lawson
Affiliation:
Australian Atomic Energy Commission, L.H.R.L. N.S.W. 2232. Australia
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Abstract

Significant dissociation is normally detected under non-optimised transient annealing of GaAs. We have utilised neutron activation to measure As and Ga loss from virgin and implanted material annealed under various transient conditions. Complementary RBS data are reported. In particular, surface dissociation has been measured as a function of pulsed ruby laser power and for several combinations of time and surface temperature using an incoherent light source and a vitreous carbon strip heater.

The results indicate that neutron activation analysis offers a powerful tool to identify the conditions required to minimise GaAs dissociation during annealing. For examplq ruby laser pulses of energy 0.29–1.38 J cm−2 caused As loss of 4 – 90 × 10 cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 633
Copyright
Copyright © Materials Research Society 1983

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References

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