Hostname: page-component-7479d7b7d-qlrfm Total loading time: 0 Render date: 2024-07-11T07:02:51.207Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanostructure Fabrication: Dry Etching Damage

Published online by Cambridge University Press:  25 February 2011

G.F. Doughty ,
R. Cheung ,
M.A. Foad ,
M. Rahman ,
N.I. Cameron ,
N.P. Johnson ,
P.D. Wang  and
C.D.W. Wilkinson
G.F. Doughty
Affiliation:
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8Q0, Scotland, UK
R. Cheung
Affiliation:
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8Q0, Scotland, UK
M.A. Foad
Affiliation:
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8Q0, Scotland, UK
M. Rahman
Affiliation:
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8Q0, Scotland, UK
N.I. Cameron
Affiliation:
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8Q0, Scotland, UK
N.P. Johnson
Affiliation:
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8Q0, Scotland, UK
P.D. Wang
Affiliation:
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8Q0, Scotland, UK
C.D.W. Wilkinson
Affiliation:
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8Q0, Scotland, UK
Get access

Abstract

Although the directed energy and chemical reactivity of dry etching permits the fabrication of nanostructures with precise geometries, it also causes unwanted electrical and optical changes to the surface, changes generally referred to as “damage”.

This paper discusses the extent and the impact of dry-etching damage on rI-V and I[-VI compound semiconductors as assessed by a very wide range of techniques: the performance of devices such as MESFETs, and measurements of other properties - surface uniformly and precisely, Schottky junction characteristics, cut-off of epitaxial wire conductance, integrated photoluminescence, X-ray reflectivity, DLTS, TEM imaging and Raman scattering.

We distinguish an important difference between the nature of damage on sidewalls and on surfaces normal to the directed ions, and report on progress towards establishing a model of the nature of dry etching damage. This model is applied to indicate what kinds of processes are likely to give etching with low damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 223
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cheung, R.M.K., Dry Etched III-V Semiconductors for Nanoelectronics, PhD thesis, Glasgow University, 1990.Google Scholar
2. Doughty, G.F., Thoms, S., Law, V., Wilkinson, C.D.W., Vacuum, 36, 803 (1986).CrossRefGoogle Scholar
3. Watt, M., Sottomayor-Torres, C.M., Cheung, R., Wilkinson, C.D.W., Arnott, H.E.G., Beaumont, S.P., J. Mod. Opt. 35, 365 (1988).CrossRefGoogle Scholar
4. MacLeod, R.W., Sottomayor-Torres, C.M., Razeghi, M., Stanley, C.R., Wilkinson, C.D.W., Proc. SPIE, 1361, 562 (1990).CrossRefGoogle Scholar
5. Wang, P.D., Foad, M.A., Sottomayor-Torres, C.M., Thoms, S., Watt, M., Cheung, R., Wilkinson, C.D.W., Beaumont, S.P., to be published in J. Appl. Phys.Google Scholar
6. Foad, M.A., Thoms, S., Wilkinson, C.D.W., paper submitted to J. Appl. Phys.Google Scholar
7. Johnson, N.P., Foad, M.A., Wilkinson, C.D.W., paper in preparation.Google Scholar
8. Cameron, N.I., Beaumont, S.P., Wilkinson, C.D.W., Johnson, N.P., Kean, A.H. andStanley, C.R., J.Vac.Sci.Technol. B8, 1966 (1990).CrossRefGoogle Scholar
9. Cameron, N.I., Hopkins, G., Thayne, I.G., Beaumont, S.P., Wilkinson, C.D.W., Holland, M., Kean, A.H. andStanley, C.R., to be published in J.Vac.Sci.Technol.Google Scholar
10. Foad, M.A., Watt, M., Smart, A.P., Sottomayor-Torres, C.M., Wilkinson, C.D.W., Kuhn, W., Wagner, H.P., Bauer, S., Leiderer, H., Gebhardt, W., Semicond. Sci. Technol., 6, Al15 (1991).CrossRefGoogle Scholar
11. Cheung, R., Birnie, A., Chapman, J.N., Thoms, S., Wilkinson, C.D.W., Microelectonics Eng. 1, 591 (1990).CrossRefGoogle Scholar
12. Foad, M.A., Hefferman, S., Chapman, J.N., Wilkinson, C.D.W., in Gallium Arsenide and Related Compounds 1990 Inst. of Phys. Conf. Series 112 298, 1990.Google Scholar
13. Cheung, R., Thoms, S., McIntyre, I., Wilkinson, C.D.W., Beaumont, S.P., J.Vac.Sci.Technol., 6, 1911 (1988).CrossRefGoogle Scholar
14. Rahman, M., Johnson, N.P., Foad, M.A., Long, A., Holland, M.C., Wilkinson, C.D.W., paper in preparation.Google Scholar
15. Cheung, R., Lee, Y.H., Lee, K.Y., Smith, T.P., Kern, D.P., Beaumont, S.P., Wilkinson, C.D.W., J.Vac. Sci., B7, 1462(1989).CrossRefGoogle Scholar