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Nano-Quasicrystalline Particles In Mn-Ion Implanted GaAs

Published online by Cambridge University Press:  10 February 2011

K. Sun
Affiliation:
Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, P.O. Box 2724, 100080 Beijing, China, khkuo@image.blem.ac.cn Department of Materials Technology and State Key Laboratory for Materials Modification by Laser, Ion, and Electron Beams, Dalian University of Technology, 116023 Dalian, China
S. Zhu
Affiliation:
Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, P.O. Box 2724, 100080 Beijing, China, khkuo@image.blem.ac.cn Department of Materials Technology and State Key Laboratory for Materials Modification by Laser, Ion, and Electron Beams, Dalian University of Technology, 116023 Dalian, China
K. H. Kuo
Affiliation:
Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, P.O. Box 2724, 100080 Beijing, China, khkuo@image.blem.ac.cn
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Abstract

Both icosahedral and decagonal quasicrystalline particles of a few tens of nanometers in size have been found in Mn-ion implanted GaAs single crystals with a dose of 8×1016 Mn+/cm2 by high resolution electron microscopy (HREM). The identity of these quasicrystals was confirmed by the Fourier transforms made from these HREM images and their composition measured by micro-probe X-ray analysis and electron energy loss spectroscopy was 38–45 at.%Mn, the rest being Ga. The orientation relations among the icosahedral quasicrystal (i), the decagonal quasicrystal (d), and the GaAs matrix found by both HREM images and their Fourier transforms are: i- 5 // d-10 // GaAs[110] or [114]. In addition, nano-particles of a cubic, a hexagonal, and an orthorhombic Ga-Mn crystalline approximant have also been found in the GaAs matrix.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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