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Nanoparticle-Based Contacts to CdTe

Published online by Cambridge University Press:  09 August 2011

D. L. Schulz
Affiliation:
Photovoltaic and Electronic Materials Center and Basic Sciences Center, National Renewable Energy Laboratory, Golden, CO 80401-3393
R. Ribelin
Affiliation:
Photovoltaic and Electronic Materials Center and Basic Sciences Center, National Renewable Energy Laboratory, Golden, CO 80401-3393
C. J. Curtis
Affiliation:
Photovoltaic and Electronic Materials Center and Basic Sciences Center, National Renewable Energy Laboratory, Golden, CO 80401-3393
D. E. King
Affiliation:
Photovoltaic and Electronic Materials Center and Basic Sciences Center, National Renewable Energy Laboratory, Golden, CO 80401-3393
D. S. Ginley
Affiliation:
Photovoltaic and Electronic Materials Center and Basic Sciences Center, National Renewable Energy Laboratory, Golden, CO 80401-3393
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Abstract

Our team has been investigating the use of particle-based contacts in CdTe solar cell technologies. Toward this end, particles of Cu-doped HgTe (Hg-Cu-Te) and Sb-Te have been applied as contacts to CdTe/CdS/SnO2 heterostructures. These metal telluride materials were characterized by standard methods. Hg-Cu-Te particles in graphite electrodag contacts produced CdTe solar cells with efficiencies above 12% and series resistance (Rse) of 6 Ω or less. Metathesis preparation of Cu(I) and Cu(II) tellurides (i.e., Cu2Te and CuTe, respectively) were attempted as a means of characterizing the valence state of Cu in the Hg-Cu-Te ink. For Sb-Te contacts to CdTe, open circuit voltages (Vocs) in excess of 800 mV were observed, however, efficiencies were limited to 9%; perhaps a consequence of the marked increase in the Rse (i.e., >20 Ω) in these non-graphite containing contacts. Acetylene black was mixed into the methanolic Sb-Te colloid as a means of reducing Rse, however, no improvement in device properties was observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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