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Nanoindentation of Silicate Low-K Dielectric Thin Films

Published online by Cambridge University Press:  01 February 2011

Joseph B. Vella ,
Alex A. Volinsky ,
Indira S. Adhihetty ,
N.V. Edwards  and
William W. Gerberich
Joseph B. Vella
Affiliation:
Motorola, Digital DNATM Labs
Alex A. Volinsky
Affiliation:
Motorola, Digital DNATM Labs
Indira S. Adhihetty
Affiliation:
Motorola, Digital DNATM Labs
N.V. Edwards
Affiliation:
Process and Materials Characterization Lab, Mesa, AZ.
William W. Gerberich
Affiliation:
University of Minnesota, Dept. of Chem. Eng. and Mat. Science, Minneapolis, MN.
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Abstract

The capabilities of nanoindentation to characterize low-k organo silicate glass (OSG) thin films is explored as a relatively rapid and inexpensive metric of mechanical properties, adhesion strength, and fracture toughness. One method of decreasing the static dielectric constant of OSG interlayer dielectrics requires the introduction of porosity in the material which has a dramatic impact on its mechanical and toughness properties. Percolation theory is used to formulate a correlation between porosity and elastic modulus. Using cube corner diamond indentation and scratch testing fracture toughness calculations are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B12.13
Copyright
Copyright © Materials Research Society 2002

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