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Multiparametric sensor for air pollutants based on a porous silicon optical microcavity

Published online by Cambridge University Press:  17 March 2011

Z. Gaburro ,
G. Faglia ,
C. Baratto ,
G. Sberveglieri  and
L. Pavesi
Z. Gaburro
Affiliation:
INFM and Department of Physics, University of Trento, via Sommarive 14, I-38050 Povo (Tn), Italy
G. Faglia
Affiliation:
INFM and Department of Chemistry and Physics, University of Brescia, via Valotti 9, I-25133 Brescia, Italy
C. Baratto
Affiliation:
INFM and Department of Chemistry and Physics, University of Brescia, via Valotti 9, I-25133 Brescia, Italy
G. Sberveglieri
Affiliation:
INFM and Department of Chemistry and Physics, University of Brescia, via Valotti 9, I-25133 Brescia, Italy
L. Pavesi
Affiliation:
INFM and Department of Physics, University of Trento, via Sommarive 14, I-38050 Povo (Tn), Italy
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Abstract

We experimentally demonstrate that porous silicon optical microcavities can be effectively used as multi-parametric gas sensors. As known, the photoluminescence intensity and electrical conduction of porous silicon are strongly dependent on environmental properties, such as the dipole moment of molecules of surrounding gases. The sensitivity is large due to the large surface/volume ratio of porous silicon. While these effects can be observed in any porous silicon structure, microcavities of porous silicon allow an additional sensing parameter, i.e. the spectral position of the resonance cavity peak. The position of the peak depends on the index of refraction of the environment, and gives independent additional information. Moreover, we show that the dynamic response of the peak shift is much faster comparing the other sensing parameters. The combined effects on the peak position, luminescence intensity and electrical conduction can allow discrimination between different substances, and therefore porous silicon optical microcavities can work as multi-parametric optical/electrical sensors. We report detection of 1 ppm of NO2 and 500 ppm of ethanol at room temperature. With NO2, the electrical conduction increases and PL quenches, but the peak does not shift, whereas the peak shifts with ethanol (no significant PL quenching is observed at 500 ppm). This suggests that discrimination between different species can be achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F11.6.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Sailor, M. J., in Properties of Porous Silicon, ed. Canham, L.T IEE Inspec - London U.K. (1997) p. 364.Google Scholar
2. Ben-Chorin, M., Kux, A., and Schecter, I., Appl. Phys. Lett., 64, 481 (1994).Google Scholar
3. Boarino, L., Baratto, C., Geobaldo, F., Amato, G., Comini, E., Rossi, A. M., Faglia, G., Lerondel, G., Sberveglieri, G., Mat. Sc. and Eng., B69–70, 210 (2000).Google Scholar
4. Fellah, S., Wehrspohn, R. B., Gabouze, N., Ozanam, F., Chazaviel, J.-N., J. Lumin., 80, 109 (1999).Google Scholar
5. Snow, P. A., Squire, E. K., Russel, P. St. J., Canham, L. T., J. Appl. Phys., 86, 1781, (1999).Google Scholar
6. Lin, V.S.Y., Motesharei, K. Dancil, K. P. S., Sailor, M. J., Ghadiri, M. R., Science, 278, 840, (1997).Google Scholar
7. Zangooie, S., Jansoon, R., and Arwin, H. J. Vac. Sci. Techol., A16, 2901, (1998).Google Scholar
8. Arrand, H. F. et al. J. Lumin., 80, 119 (1999).Google Scholar
9. Pavesi, L., La Rivista del Nuovo Cimento 10, 1, (1997).Google Scholar
10. Pavesi, L., and Mulloni, V., J. Lumin., 80, 43 (1999).Google Scholar
11. Mulloni, V., and Pavesi, L., Appl. Phys. Lett., 76, 2523 (2000).Google Scholar
12. Mulloni, V., Mazzoleni, C., and Pavesi, L., Semicon. Sci. and Techn., 14, 1052 (1999)Google Scholar
13. Endres, H-E., Hildegard, D. J. and Göttler, W., Sens. and Act., B23, 163(1995).Google Scholar
14. Gao, J., Gao, T., and Sailor, M. J., Appl. Phys. Lett., 77, 901 (2000).Google Scholar