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MOVPE Growth of GaAs on Si Using Tertiarybutylarsine

Published online by Cambridge University Press:  25 February 2011

S. Miyagaki ,
S. Ohkubo ,
K. Takai ,
N. Takagi ,
M. Kimura ,
Y. Kikuchi ,
T. Eshita  and
K. Takasaki
S. Miyagaki
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
S. Ohkubo
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
K. Takai
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
N. Takagi
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
M. Kimura
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
Y. Kikuchi
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Eshita
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
K. Takasaki
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Abstract

We developed GaAs heteroepitaxy on a Si substrate by metalorganio vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). When we preheated Si at 1000ºC in the atmosphere including TBAs, a carbide layer was formed on the Si surface. This led to polycrystalline GaAs growth. By carrying out high-temperature preheating in an H2 -only atmosphere and supplying TBAs after the preheating, we have successfully grown single-crystal GaAs with a mirror surface in a process completely free of AsH3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 209
Copyright
Copyright © Materials Research Society 1992

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References

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